Perform theoretical calculations based on first-principles methods of the degradation of semiconductor devices in harsh environments, especially of the degradation caused by radiation. Ab initio methods used to calculate the band structure, defect morphology and electronic properties, electron energy losses and scattering rates should be coupled to advanced semi-classical electron-transport simulations (such as Monte Carlo) to calculate the electron relaxation, defect generation, and the related degradation of the device characteristics.

Master’s degree in a field directly related to specified research area and two (2) years of directly applicable experience conducting research related to the specified field of study.

PhD in physics, electrical engineering, or materials science.

To the extent this position requires the holder to research, work on, or have access to critical infrastructure as defined in Section 117.001(2) of the Texas Business and Commerce Code, the ability to maintain the security or integrity of the critical infrastructure is a minimum qualification to be hired and to continue to be employed in the position.

Develop simulation software, perform the calculations and coordinate this activity with experimentalists to verify the accuracy of the physical models, predict device degradation and suggest new experiments.

A remote work schedule is not available for this position.

What We Can Offer
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Please include CV and examples of publications relevant to the position.

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